Shanghai Institute of Microsystems and Information Technology has made new progress in the study of graphene/hexagonal boron nitride planar heterojunctions. Researcher Xie Xiaoming’s research team has successfully prepared a single atomic layer of high-quality graphene/hexagonal nitrogen using the chemical vapor deposition (CVD) method Boron planar heterojunction was successfully applied to WSe2/MoS2 two-dimensional photodetector device. The research paper Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu–Ni Alloy was published in Advanced Science on May 19th. Monomer boron

Boron Nitride

Graphene (graphene) and hexagonal boron nitride (h-BN) have similar structures but very different electrical properties. Because the graphene/hexagonal boron nitride planar heterojunction is important in basic research and device exploration, the academic community has paid attention. The preparation of graphene/h-BN planar heterojunction is generally achieved by sequentially depositing graphene and h-BN, or the reverse order. Due to the subsequent film nucleation control and the reaction gas during the growth process, it is easy to damage the precursor film. Therefore, the current literature reports that the quality of graphene/h-BN planar heterojunction is not satisfactory. Lu Guangyuan and Wu Tianru of the State Key Laboratory of Information Functional Materials, Shanghai Institute of Microsystems, etc., based on the research basis of growing high-quality h-BN and graphene films on copper-nickel alloy substrates, by depositing h-BN single crystals and then growing graphene. Successfully prepared high-quality graphene/h-BN planar heterojunction. Due to the fast growth of graphene on the copper-nickel alloy, the shorter graphene deposition time reduces the damage to the h-BN film during the growth of the graphene film. At the same time, due to the excellent catalytic ability of the copper-nickel alloy, the random nucleation of graphene is eliminated while improving the crystal quality of the boron nitride single crystal, so that the graphene domains are only formed at the corners of the triangular h-BN single crystal domains. The nucleus grows along the h-BN edge orientation. The research group cooperated with American Rice professor Jun Lou and other teams, using the cooperative training program for doctoral students, based on the high-quality graphene/h-BN planar heterojunction, using graphene as the contact current and h-BN as the edge lining At the end, the WSe2/MoS2 two-dimensional photodetector was prepared to verify the quality and electrical performance of the graphene/h-BN planar heterojunction, and to carry out basic research and two-dimensional logic integrated circuit application exploration based on the heterojunction material platform Provided the foundation.

This work was funded by the major special project "Research on Wafer-Level Graphene Electronic Materials and Devices" of the Ministry of Science and Technology and related research projects of the Chinese Academy of Sciences and the Shanghai Municipal Science and Technology Commission. (Source: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)