"Two-dimensional materials" refer to materials in which electrons can move freely (planar motion) on the non-nanoscale (1-100nm) in two dimensions, such as nano-films, superlattices, and quantum wells. When these layered two-dimensional materials are stacked together, they will show new electrical, optical, and thermal properties. Therefore, because two-dimensional materials help to increase the capacity of electronic devices, the interest in two-dimensional materials in the academic and industrial circles continues to rise. Among them, graphene is a typical two-dimensional material. Monomer boron

"RRAM" is based on a new type of semiconductor material. Depending on the voltage applied to it, the resistance of the material changes accordingly between a high resistance state and a low resistance state, thereby opening or blocking the current flow channel, allowing or rejecting electrons. The two forms of the flow, correspondingly represent the number "0" or "1", using this property can be made into a memory for storing various information.

In addition, RRAM is also called a memristor. Memristor, the English name "Memristor" is a hybrid word of the English words Memory (memory) and Resistor (resistance). As the name suggests, it is related to memory and resistance. The person who proposed the concept of memristor early was a teacher in the United States. Cai Shaotang, a Chinese scientist at Berkeley, dates back to 1971. Professor Cai concluded that there should be another component besides resistance, capacitance and inductor, which represents the relationship between electric charge and magnetic flux.

Research Introduction

The research team consists of Dr. Mario Lanza. He is a young talent of the National Thousand Talents Program. He was born in Barcelona, Spain, and is currently doing research in Suzhou, China. Currently, he is working on investigating the properties of layered dielectric materials. In his recent paper published in "Advanced Functional Materials", Professor Lanza and colleagues used multilayer hexagonal boron nitride as the dielectric to design a set of resistive random access memory (RRAM). However, this device has shown that it can form a free double sum under the conditions of an operating voltage of 0.4 volts, a current switching ratio of 1,000,000, an expected memory time of more than 10 hours, and the variability of "cycle to cycle" and "device to device". Threshold type resistance switch (RS). RS is driven by grain boundary drives (GBs) in a polycrystalline hexagonal boron nitride stack, which allows ions to penetrate from adjacent electricity. The generation of B vacancies will promote this effect, and B vacancies are more abundant in GBs.

This research was carried out in collaboration with MIT, Stanford and Harvard. The results of this research will play a role in the development of digital electronic devices made of two-dimensional materials.