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Six party research has made new progress: it can be applied to ultraviolet laser devices.

Release date:2017-11-22 Author: Click:

     

The team led by academician Xue Qunji and Zhang Guangan of the State Key Laboratory of solid lubrication, Lanzhou Institute of Chemical Physics, Lanzhou Institute of Chemical Physics, under the support of the National Natural Science Foundation Project and the leading scientific research project of the Chinese Academy of Sciences, has studied the theory of six party boron nitride electrical properties in the pressure induced regulation. New progress has been made.

Six square boron nitride, as a wide band gap insulator, hinders its wide application in electronic devices, and the study of its structural engineering can develop a lot of potential applications. For example, the transformation of its band structure: the transition between direct bandgap and indirect band gap is very important for its application in the applications of luminescent nano devices and UV laser devices. These will stimulate the researchers to control its band gap through a variety of feasible means, and so far the means of controlling the six square boron nitride band gap are mainly applied electric field, doping, deformation and so on. Although these methods help to regulate the band gap of six - party boron nitride, the nature of the band gap transition is still unclear. The change in crystal structure and the connection between the band gap transition and its electronic properties still need further study.

We use pressure to control the six boron nitride band gap. Compared with the above methods, it is a simple and feasible method, nor does it introduce foreign impurities. In addition, there is no systematic report on the transformation of the electronic properties of six square boron nitride under normal pressure. Many interesting phenomena still need to be explored. Furthermore, it is very important to understand the relationship between the electronic properties and pressure of the six side boron nitride, which is very important for its application in electronic devices. To this end, we further studied the changes in the electronic properties of six square boron nitride under the action of normal pressure in three different stacking modes. Using the method of first principle, the adsorption energy and band gap of six square boron nitride under the pressure of three stacking modes were calculated, and the band structure and the electronic local functional were used. The change trend of the band gap with the pressure is analyzed. The results show that the normal pressure can well regulate the band gap of six square boron nitride. Under the reactor arrangement mode I and II, the band gap decreases first and then decreases with the increase of pressure, which is very different from the monotonically decreasing trend of band gap under the control of electric field, but the lower band gap in the pile arrangement mode decreases monotonically with the increase of pressure. When the pressure reaches 34.3% (heap arrangement mode II), the six square boron nitride is transformed from the direct band gap to the indirect band gap, which is of great significance for the application of the six square boron nitride in the light emitting devices; the pressure reaches 28.6% (heap arrangement mode I) and 45.7% (heap arrangement mode III) transition from the insulator to the semiconductor. The wide application of six boron nitride in electronic devices is of great significance. The results were published in the recently published Ceramics International (2017, 43, 6626).

  


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