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Graphene nanoribbons were successfully prepared in boron nitride trench at six angles in Shanghai microsystem.

Release date:2016-07-27 Author: Click:


The successful preparation of graphene nanoribbons in the six angle boron nitride groove, such as the preparation of graphene nanoribbon Microsystems, in the six angle boron nitride groove, and so on in the Shanghai micro system. New progress has been made in the study of the controllable preparation of the graphene nanometers by the Shanghai microsystems and Information Technology Institute of the National Academy of Sciences. Wang Haomin team, a researcher of the State Key Laboratory of information functional materials, realized the controllable growth of graphene nanoribbons in the six angle boron nitride groove by template method in the world, and successfully opened the band gap of graphene, and verified its excellent electrical properties at room temperature. It provided a possible way to develop the digital circuit of the stone. Technology path. The results were published in the March 9th journal Nature communications (L. Chen, et al, Oriented graphene nanoribbons embedded in hexagonal boron nitride), 8, 14703, 2017). The preparation method of graphene nanoribbons has been inventions in China and the United States.

boron nitride

The researchers first etched the six angle boron nitride single crystal substrate by metal nanoparticles to cut the nanoscale grooves with a single atomic layer thickness, a flat edge and a certain controllability along the direction and width of the sawtooth (Zigzag). Then the length of a micron was obtained in the groove by chemical vapor deposition, and the width was less than 10 nanometers in width. High quality graphene nanoribbons. The experimental results show that graphene is grown by step epitaxial growth in the grooves, forming a continuous in-plane heterojunction with the top six boron nitride. The researchers prepared field effect transistors based on graphene nanoribbons. The current switching ratio of sub5nm devices at normal temperature is greater than 104 and the carrier mobility is about 750 cm2/Vs. The electrical transport band gap extracted from electrical measurement is about 0.5eV, which can meet the basic requirements of digital circuit research and development.

Graphene is a two-dimensional atomic crystal composed of single-layer carbon atoms with excellent physical, chemical and electrical properties. However, the band gap of intrinsic graphene materials is zero, which limits its application in micro and nano electronic devices, especially in digital circuits. The preparation of bandgap with graphene nanoribbons is a very potential method. However, the traditional method for preparation of graphene nanoribbons is difficult in width and boundary chirality control, and it also faces the shortcoming of need to transfer. On the ideal substrate of the six angle boron nitride single crystal, this study verified a transfer free and controlled circuit with controllable width and boundary, which provides an important platform for further exploring the logic circuit compatible with CMOS integrated circuits.

Boundary control is an important prerequisite for the preparation of practical fossil graphene logic devices. This study has preliminarily proved that the prepared nano band is a pure serrated boundary structure through a variety of experimental methods, and the study of direct evidence for atomic level element resolution is under way.

The research has been supported by the 02 major project of the Ministry of science and technology, "wafer level graphene electronic materials and device research" (2011ZX02707). The cooperative units of the study include the Shanghai University of science and technology, the Huazhong University of Science and Technology, the Central South University, Nanyang Technology University, Fudan University and the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences.

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